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inchange semiconductor isc product specification isc silicon npn power transistor BUP41 description high collector current-i c = 6a low collector saturation voltage - : v ce(sat) = 0.4v(max)@ i c = 3a, i b = 0.1a b high switching speed complement to type bup40 applications for audio amplifier and gener al purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 6 v i c collector current-continuous 6 a p c collector power dissipation @ t c =25 10 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUP41 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce( sat ) collector-emitter saturation voltage i c = 3a; i b = 0.1a b 0.4 v v be( sat ) base-emitter saturation voltage i c = 3a; i b = 0.1a b 1.4 v i cbo collector cutoff current v cb = 40v; i e = 0 1.0 a i ebo emitter cutoff current v eb = 4v; i c = 0 1.0 a h fe-1 dc current gain i c = 1a; v ce = 2v 100 500 h fe-2 dc current gain i c = 3a; v ce = 2v 40 f t current-gain?bandwidth product i c = 1a; v ce = 5v 120 mhz c ob output capacitance i e = 0; v cb = 10v 25 pf isc website www.iscsemi.cn 2 |
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